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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP52N06SLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP52N06SLG is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP52N06SLG-E1-AY
NP52N06SLG-E2-AY
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape
2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
? Channel temperature 175 degree rating
? Low on-state resistance
R DS(on) = 17.5 m Ω MAX. (V GS = 10 V, I D = 26 A)
? Logic level drive type
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-252)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
60
± 20
± 52
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 104
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
56
1.2
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
20
40
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150°C, V DD = 30 V, R G = 25 Ω , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
2.68
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18202EJ2V0DS00 (2nd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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